用四探针方法测量立方氮化硼的电阻率

The conductivity detection of Si-doped CBN by four probes method

本文利用薄膜沉积和光刻方法,在Si掺杂的p型立方氮化硼单晶表面制备出微小测量电极,测量出高温高压合成的、并经过热扩散获得的Si掺杂p型立方氮化硼的电阻率和导电特性,为小尺寸晶体材料的电学性质测量提供了一个有效的方法。

In this paper, the film deposition and lithography method have been used to prepare the micro-circuit on the Si doped CBN crystal. The conductivity of this kind of semiconductor CBN was measured at ambient condition. Al_2O_3 and Mo film were used as the insulation layer and measurement probes, respectively. This method is useful for the electrical characteristic study of microcrystalline semiconductor.