Sub-100-nm特征尺寸研究及干法刻蚀技术的近代发展特点

RESEARCH ON SUB-100-NM PATTERN SIZE AND DEVELOPMENT OF DRY ETCHING TECHNIQUES

微细加工技术建立在电子、离子和光子的粒子能量(物理)和引起的微化学反应(化学)的基础上。固有的粒子微小尺寸给它带来了惊人的精细加工能力。所谓大规模集成电路及声、光、电、磁特种器件都必须依赖这种特殊而广泛使用的技术才得以出现和发展。这包括图形的产生和复印,单层和多层,一维和多维等工艺的推进。越来越细的线宽尺寸给集成电路和器件性能及制造成本带来了极大的好处,因而追求0.1μm以下的尺寸令人们发生极大兴趣,并愿投入相当可观的经费。然而在微米级不曾发生的现象当达到0.1μm以下时发生了。这不仅关系到制造工艺流程的配置,也关系到新的器件原理。未来的器件应如何考虑所出现的新的效应和如何修改原有的设计理论是个新的课题。本文着重对此课题进行论述。

Advances in microfabrication technology make it possible to fabricate very fine metal wires as narrow as 20nm by using photon, electron and ion beams. New quantum transport effects become evident when a pattern size is less than 0.1 μm. Several laboratory researches have already shown that a new device design concept can be derived from the effects which is significant to future VLSI or special devices in the condition of low temperature operation.The purpose of this paper is to review the recent progress in research on quantum transport effects in sub-100-nm microstructures. Some related problems are discussed. A new dry etching method and its development trends are introduced.