非晶态Te_（81）Ge_（15）Sb_4薄膜材料的电学性能

ON THE ELECTRICAL PROPERTIES OF AMORPHOUS Te81Ge15Sb4 THIN FILM MATERIAL

对用熔体淬火再真空蒸发所制备的非晶态Ｔｅ＿（８ｌ）Ｇｅ＿（１５）Ｓｂ＿４薄膜的伏－安特性，直流电导率及玻璃转变温度等性能进行了研究。结果表明，这种材料具有较好的开关效应及较高的热稳定性，可用作开关器件等。

The current-voltage characteristic and the activation energy for DC electrical conductionand the glass transition temperature of Te81Ge15Sb4 thin film have been studied,which wasprepared by the method of melt-quenching and then vacuum evaporation。The results showthat the material possesses both better memory switching effect and higher thermal-stability。It can be used for switching elements。