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二价硅离子3snp^1P_1序列能级的辐射寿命

THE RADIATIVE LIFETTIMES FOR THE SINGLY EXCITED 3snp1p1 SERIES OF DIVALENT SILICON ATOM
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摘要 考虑了二价硅离子双激发干扰态3p4s1p1和3p3d1p1对3snp1P1Rydberg序列能级的强组态相互作用,用多组态HFR自洽场方法计算了SiⅢ离子3snp1P1(n=3~7)序列能级的辐射寿命。计算结果表明该序列能级寿命随主量数n呈现非规则变化。对其原因进行了讨论,并将结果与已有的实验和理论计算结果进行了比较。 Based on the strong configuration mixing between the doubly excited states 3p4s1P1,3P3d1p1 and the singly excited 3snp1p1 series,this paper has calculated the radiative lifetimesof the 3snp1P1 series(n=3~7) for ion Si Ⅲ by using the multi-configuration HFR self-con-sistent field method.The calculated results show more drastic nonuniform variation of theradiative lifetimes of the 3snp1p1 series as the principal quantum number n increases.Com-parisons with the existing theoretical and experimental data are also presentel
机构地区 西安交通大学
出处 《西安交通大学学报》 EI CAS CSCD 北大核心 1995年第8期123-126,共4页 Journal of Xi'an Jiaotong University
关键词 硅离子 自洽场方法 辐射寿命 能级 电子 激发态 divalent silicon atom self-consistent field method radiative lifetime
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参考文献1

  • 1Chang T N,Phys Rev A,1991年,44卷,1期,80页

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