摘要
考虑了二价硅离子双激发干扰态3p4s1p1和3p3d1p1对3snp1P1Rydberg序列能级的强组态相互作用,用多组态HFR自洽场方法计算了SiⅢ离子3snp1P1(n=3~7)序列能级的辐射寿命。计算结果表明该序列能级寿命随主量数n呈现非规则变化。对其原因进行了讨论,并将结果与已有的实验和理论计算结果进行了比较。
Based on the strong configuration mixing between the doubly excited states 3p4s1P1,3P3d1p1 and the singly excited 3snp1p1 series,this paper has calculated the radiative lifetimesof the 3snp1P1 series(n=3~7) for ion Si Ⅲ by using the multi-configuration HFR self-con-sistent field method.The calculated results show more drastic nonuniform variation of theradiative lifetimes of the 3snp1p1 series as the principal quantum number n increases.Com-parisons with the existing theoretical and experimental data are also presentel
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
1995年第8期123-126,共4页
Journal of Xi'an Jiaotong University
关键词
硅离子
自洽场方法
辐射寿命
能级
电子
激发态
divalent silicon atom self-consistent field method radiative lifetime