电化学引起Si：Er^（3＋）材料1．54μm发光增强

THE ANODIZATION INDUCED 1. 54μm LUMINESCENT INTENSIFICATION OF THE St: Er￣(3+) MATERIAL

利用７７Ｋ红外光致发光实验研究了电化学过程对离子注入Ｓｉ：Ｅｒ（３＋）样品的光致发光影响．实验表明：电化学过程除在Ｓｉ：Ｅｒ（３＋）样品硅基质晶体中引入大量的深能级局域态外，还使Ｓｉ：Ｅｒ（３＋）样品中Ｅｒ（３＋）的１．５４μｍ光致发光效率明显提高，且Ｅｒ（３＋）发光峰增宽，次峰更丰富．

The influence of electrochemical anodization on the Er3+ luminescence from Si:Er3+ samples fabricated by the ion implantation technique was studied by using the infrared photoluminescence experiment at 77K.The experiment suggested that there is a great number of localized deep levels formed in the silicon crystal of the St:Er3+ samples in the anodization process. It is significant that the 1.54pm emission of the Er3+from the Si:Er3+ samples is intensified efficiently by the addition of anodization into the sample-fabricating process. The Er3+-emitting peak of 1.54μm of the samples is also widened and there are rich companion peaks of the Er3+luminescence appearing in the PL spectra of the anodized samples.