［（Cdse）_m（ZnSe）_n］_p－Znse多量子阱中的多声子散射

MULTIPHONON SCATTERING IN [(CdSe)_m (ZnSe)_n]_p-ZnSe MULTIQUANTUM WELLS

对用原子层外延方法，在［００１］晶向ＧａＡｓ衬底上生长的［（Ｃｄｓｅ）ｍ（Ｚｎｓｅ）ｎ］ｐ－ＺｎＳｅ应变量子阱结构，在１０～３００Ｋ温度范围内测量了喇曼散射光谱，观察到两种类ＺｎＳｅＬＯ声子限制模．利用改变样品温度和入射光能量实现了共振喇曼散射，观察到高达７阶的类ＺｎＳｅＬＯ声子模．并讨论了多声子喇曼散射和热萤光过程的区别．

The sample of [(CdSe )m(ZnSe )n]p-ZnSe strained multiquantum well structures,which were composed of [(CdSe)m(ZnSe )n]p ultra thin layer superlattice (as the well layer)and thick ZnSe (as the barrier layer),was deposited on a [001]-oriented GaAs substrate by atomic layer epitaxy.Its Raman and photoluminescence spectra were measured at 10-300K.Two kinds of ZnSe-like LO phonon confined modes were observed.Resonant Raman scattering was accomplished by changing the sample temperature and the incident photon energy.As a result,up to 7 orders of ZnSe-like LO modes were observed.The difference between the multiphonon Raman scattering and the hot luminescence was discussed.