杂质对生长SiGe／Si量子阱发光材料的影响

IMPURITY INFLUENCE ON THE PHOTOLUMINESCENCE FROM SiGe/Si QUANTUM WELL STRUCTURES

发现Ｓｉ源和Ｇｅ源中的深能级杂质是影响ＳｉＧｅ／Ｓｉ量子附带过激子发光的主要因素．研究了在低阻衬底上外延、在量子阱中重掺Ｓｂ或顶层中重掺Ｂ都将减弱甚至淬灭量子阱的带边激子发光．

Deep level impurities in the background were found to be vital for the luminescence of QW,grown by solid source Si MBE.The samples grown on undoped and heavily doped substrates,i.e.Sb-doped in QW and B-doped in cap layers were studied.Impurity contamination causes deep levels,which severely reduces radiative efficiency of SiGe/Si QWs.