多晶硅接触薄发射极欧姆接触电极的研究

On the Ohmic Contact Electrode of a Polysilicon Contact Thin Emitter

提出了制备新型多晶硅接触薄发射极晶闸管薄发射极欧姆电极的新结构──Ａｌ／Ｔｉ／Ｐｏｌｙｓｉ。结构。通过实验研究和对Ａｌ－Ｔｉ－Ｓｉ系统反应动力学的分析，解决了此结构的关键问题──Ｔｉ层厚度的确定方法及其制备工艺条件；对此结构的有效性和质量，即浅结的完整性以及欧姆接触电阻的大小进行了实验检查。采用此结构，已成功地制备出低损耗、快速薄发射极晶闸管管芯样品。

The preparation of the electrode structure of Al/Ti/Polysi.of the thin emitter for a new-type polysilicon contact thin emitter thyristor is proposed.Through experimental investiga-tion and reaction kinetics analysis on an Al-Ti-Si system,two key problems,the determina-tion of the Ti layer thickness and the technological parameters of the preparation have beensolved. The integrity of the shallow p-n junction and the magnitude of ohmic contact resis-tance have been inspected experimentally.Tablet samples of low-loss and high-speed thinemitter thyristors have successfully been prepared using such a structure.