摘要
本文评述了光 CVD SiO_2钝化膜的原理和方法,介绍了在50～300℃温度下,在 Si、InSb 和 HgCdTe 晶片上光 CVD SiO_2钝化膜。讨论了膜的淀积条件和性质以及光 CVDSiO_2钝化膜在 InSb、HgCdTc 红外探测器中的应用。
The principes and the methods of photo-CVD SiO_2 passivation films are reviewed.At temperatures of 50～300℃,SiO_2 passivation films on wafers of Si,InSb and HgCdTe prepared by photo-CVD method are presented.The deposit conditions and properties of films as well as applications of photo-CVD SiO_2 passivation films for InSb and HgCdTe infrared detectors are discussed.
出处
《半导体光电》
CAS
CSCD
北大核心
1989年第2期79-84,90,共7页
Semiconductor Optoelectronics
