摘要
采用常规膜厚监控方法在二极管激光器端面镀高效减反射膜有很多困难。本文从理论上研究了自发光监测控制减反射膜的可行性,并且得到了用这种方法在半导体激光器端面镀高效减反射膜的实验结果。利用 Kaminow 等人提出的间接测量法,测得在 GaAs 激光器端面镀制了单层 SiO 膜后的剩余反射率小于5×10^(-4)。
It is very difficult to realize the high efficient antireflection (AR) film coating on the facets of laser diode with the conventional monitoring technique for control the film thickness.In this work,the feasibility of monitoring AR film coating on the facets of semiconductor laser via detecting the spontaneous emission from the laser diode has been investigated theoretically and experimentally.The method proposed by Kaminow et al.has been adopted to measure the modal reflectivi- ty of the AR coaling on the facets of the GaAs laser.The results have shown that a single layer of AR coating with a reflectivity of less than 5×10^(-4) has been obtained
出处
《半导体光电》
CAS
CSCD
北大核心
1989年第2期8-14,73,共8页
Semiconductor Optoelectronics
基金
国家自然科学基金
