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PTC-BaTiO_3射频溅射用靶材的制备

Fabrication of the PTC-BatiO_3 Target for Rf-sputtering
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摘要 研究了用于射频溅射PTC-BaTiO_3薄膜的厚大靶材制备工艺,所制成的靶材的室温电阻率为800Ω·cm,PTC效应>105,平均粒径为1~3μm,讨论了配方中TiO_2品种的选择。 The preparation technology of a thick and large PTC-BaTiO3 target to be used as a source of rf-sputtering identical composition films is studied. The target has a resistivity (atroom temperature) of 800Ω·cm and its PTC effect is greater than 105. The diameter of the crystal grains has the mean value of 1~μm. The influences of the selection of the variety of TiO2, the proportions of the donors and the acceptors in the prescription, the rates of heating and cooling during sintering of the PTC effect are discussed.
机构地区 武汉工业大学
出处 《材料科学与工艺》 EI CAS CSCD 北大核心 1995年第4期44-47,共4页 Materials Science and Technology
关键词 靶材 射频溅射 PTC 薄膜 集成电路 PTC-BaTiO3 Target Rf-sputtering
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