SnO_2气敏薄膜沉积速率的数值模拟

Numerical Simuiation of the Deposition

本文依据等离子体化学气相沉积法(PCVD)制备SnO_2导电薄膜的过程,提出一种数学模型。通过数值计算,讨论了沉积的关键参量—活性粒子沉积速率与过程参数(气压、温度等)。的相互关系,对结果作了初步分析并与实验进行了比较。

A dynamic model for the PCVD of SnO2 in the radial-flow reactor is proposed. The deposition rate in the radial direction were obtained by numerical simulation. Lhe relationship between the deposition rate and processing parameters were determined.