摘要
本文介绍目前国外直接在 Si(100)衬底上异质外延生长以 GaAs 为代表的Ⅲ-Ⅴ族化合物半导体材料和器件的进展。
Recent progress in foreign countries on the materials and devices of Ⅲ-Ⅴ compound semiconductors such as GaAs that are hetero-epitaxy grown diiectly on Si(100) substrate are presented.
出处
《半导体光电》
CAS
CSCD
北大核心
1989年第2期45-50,共6页
Semiconductor Optoelectronics
