硅中磷的挥发速度系数的测定

Determination of Volatlize Speed Coefficient of Phosphide in Silicon

本文给出了一种通过真空区熔工艺测量电阻率的方法，用测定和计算磷的挥发速度系数的方法。可以给出挥发系数与ρ的关系曲线，即随着提纯次数的增加，挥发系数Ｅ的数值有下降的趋势；特别是电阻率增大时，Ｅ的数值减小。

This papper presents a testing method on electrical resistivity by vacuum local melting technology, which is to confirm and calcuate the volatizing speed coefficient of phosphorus. This method is conducted for the result of the curve relationship between the volatizing coefficient and P. The increased number of pruification leads to the decrease of the value of volatizing coefficient, particularly the E value diminishing at the increase of electrical resistivity.