摘要
研究了用铟锡合金靶直流磁控反应溅射制备ITO透明号电膜。介绍了膜的制备工艺和膜的特性。讨论了成膜过程和热处理对膜的电阻率和透光率的影响。
ITO transparent conducting films deposited by DC magnetron reactive sputtering from In-Sn alloy target were Studied. The process and properties of ITO films are described. The effects of depositing and annealing parameters on transmission of films are discussed as well.
出处
《光电子技术》
CAS
1995年第1期72-78,共7页
Optoelectronic Technology
关键词
ITO膜
透明导电膜
磁控反应溅射
ITO films, transparent conducting films, DC magnetron reactive sputtering
