12GHz　GaAs单片混频器

A 12 GHz GaAs Monolithic Mixer

分析研究了一种新型１２ＧＨｚＧａＡｓＭＥＳＦＥＴ单片混频器，这种混频器采用级联ＦＥＴ作为混频元件。射频（ＲＦ）和本振（ＬＯ）信号分别通过各自的匹配网络进入混频电路，在中频输出端用中频缓冲放大器代替通常的中频匹配电路。电路在厚０．２ｍｍ，面积１．５ｍｍ×１．２ｍｍ的ＧａＡｓ基片上实现。设计的ＭＭＩＣ混频器在本振１１ＧＨｚ，射频１１．７～１２．２ＧＨＺ频率范围内的最大变频增益１．８ｄＢ。这一结果使进一步研究单片微波接收机成为可能。

This paper describes a 12 GHz GaAs MESFET monolithic mixer. Themonolithic mixer uses two cascade-connected FETs as a mixing device. RF and LOpowers are delivered through individual matching circuits into the gate of FETs. Abuffer amplifier has been connected directly into the mixer's IF port, instead of employing an iF matching circuits. The chip size is 1. 5 mm× 1. 2 mm on a 0. 2 mmGaAs substrate. The maximum conversion gain of the mixer is 1. 8 dB over the signal frequency band from 11. 7 GHz to 12. 2 GHz and for a LO frequency of 11 GHz.