摘要
分析了硅片Map图所提供的生产成品率和各类不合格芯片的位置分布信息,讨论了利用硅片之间Overlap法(重叠法)和硅片上Window法(窗口法)对Map图进行的统计。着重讨论了:按硅片中不合格芯片密度的显著差异划分边缘区及中心区;不合格芯片局部聚集现象的定量表示;随机性强的不合格芯片的统计分布;有关信息由相应C语言软件自动提取,与Map图计算机测试进行联用,可用于生产监控、影响成品率因素分析和工艺缺陷的深入研究。
he process information is extracted from Si wafer map data by using the“overlap”and“window”methods, which analyses dice yield and distribution of “bad”chips statistically. The center and side area on the wafer determined by“bad”chip density are obtained by statistical judgement. The shape and location of bad chip clustering resulting from systematic errors are also obtained through“window”division. The resulting random space distribution of“bad”chips marks the random defect distribution on the wafer. Softwares using these methods can be easily applied to wafer map testing,making process defect control and yield loss analysis easler.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1995年第2期180-184,共5页
Research & Progress of SSE
基金
"七五"攻关<先进CAD技术>资助