异质谷间转移电子器件的计算机模拟

Computer Simulation for Heterostructure Intervalley Transferred Electron Devices

使用弛豫时间近似求出了描述两能谷间电子交换的方程。在此基础上建立了双能谷电子的连续性方程和油松方程。对具体的ＧａＡｓ／ＡｌｘＧａ１－ｘＡｓ异质谷间转移电子器件结构求解了这些方程组，得到了直流工作时器件内的电场分布、双能谷中载流子的布居以及两个能谷的电流分布。这些结果正好和常规Ｇｕｎｎ器件相反，说明了两种器件的不同工作机理。最后通过对低Ａｌ组份势垒结构的计算说明了Ｘ谷电子注入对器件工作的重要作用。

y using relaxation time approximation the electron transference equations between two valleys are derived, from which the continuity equations and Possion equation are built up. These equations are solved for concrete GaAs/Al GaAs heterostructure intervalley transferred electron devices, and so the electrical field, the population between two valleys and the current profile for two valleys are obtained. These results present a striking contrast to those of the traditional Gunn diode, which shows different operation mechanisms between these two diodes. Finally through the calculation for low Al composition barrier the function of X electron injection is demonstrated.