摘要
对由GaAs,Al0.21Ga0.79As及AlxGa1-xAs(x由0.0~0.21之间变化)三种材料构成的超晶格能带结构进行了研究。结果发现:如果超晶格单胞对其中点不具有对称性,对应自旋向上和向下的能带,此时发生了劈裂.并且由于材料不对称分布引起的劈裂比由于几何尺寸不对称引起的劈裂大。劈裂主要发生在重、轻空穴带相互作用较大的地方。
The band structure of the superlattice composed with GaAs, Al0.21Ga0.79 As and Alx Ga1-xAs (here x is in 0. 0-0. 21 ) is studied in this paper, It is shown that when the superlattice unit-cell is not symmetrical about the centre of the unit-cell, the bands corresponding to spin-up and spin-down will split, the splitting induced by the insymmetrical distribution of material is larger than that by the insymmetry of geometrical size, and the splitting mainly occurs at that region where the heavy hole and light hole act each other strongly.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1995年第2期105-109,共5页
Research & Progress of SSE
关键词
能带结构
超晶格
能带劈裂
Energy Band Structure
Superlattice
Energy Band Splitting