摘要
设计了多孔硅电致发光器件，讨论了工艺条件对器件Ｉ—Ｖ特性影响。试验中已观察到微弱的电致发光。认为利用多孔硅制备可见光发光器件是可行的。
A porous silicon (PS) light emitting device has been designed,and the influence of fabricating technique on its I-V characteristic is discussed. A faint electroluminescence phenomenon has also been observed. Experimental results show that visible light emitting device fabricated by PS is feasible.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1995年第4期352-355,共4页
Research & Progress of SSE
关键词
多孔硅
发光器件
Porous Silicon Light Emitting Device I-V Characteristic
