无针孔砷化镓表面的LB膜钝化技术

LB Film Passivation of Unpinned GaAs Surfaec

本文评述了一种获得无针孔 GaAs 表面的钝化新技术——LB 膜光化学钝化技术。这种技术可望改善 MIS 场效应晶体管的性能,制造出稳定的高性能的 GaAs基质 MIS 器件。

We survey a new technology—LB film passivation.This techno- logy will be expected to improve the performance of MIS FET′s,and fabricate some GaAs-based MIS devices with high performance and stability.