摘要
本文概述了常规耗尽层 C-V 分布中,可达深度和深度分辨率的基本限制。特别讨论了电化学 C-V 分布的实际技术和应用。列举了 PN4200自动描绘的Ⅲ-Ⅴ族化合物 GaAlAs/GaAs、InGaAsP/InP 多层异质结构的载流子浓度分布曲线,并分析了液相外延生长中 Zn 掺杂的特性。同时,还分析了测量精确度和深度分辨之间的关系,并考虑了电解液、接触面积、串联电阻和深态的影响。最后,叙述了电化学 C-V 技术在测量光电压谱和量子阱结构方面的应用。
The basic limitation of the accessible depth and depth resolution in conventional depletion C-V profiling is summarized.The actual techniques and capabilities of electrochemical C-V profiling are discussed particularly.The examples of carrier concentration profiles of Ⅲ-Ⅴ compound GaAlAs/GaAs,InGaAsP/InP multilayer heterostructures measured by PN4200 are enumerated,and features of the Zn doped in LPE growth are also analysed.At the same time,the relations bet- ween the measurement accuracy and instrumental depth resolution are analysed,and the influence of electrolyte,contact areas,series resistances is considered.Finally, the capabilities of measurement of photovoltage spectra and multiquantum well struc- tures are described.
出处
《半导体光电》
CAS
CSCD
北大核心
1989年第4期19-25,共7页
Semiconductor Optoelectronics
