摘要
本文用一种综合场效应方法(简称 CFE),研究了用于发光二极管制作的多层异质结 GaP/GaAs_(i-x)P_x 等外延材料的某些性质,测量并计算了一系列参数;证明了某些样品各层间存在不连续性及其对发光的影响,从而提供了测量发光器件的一个方法。
Some properties of the multi—layer GaAs_(1-x)P_x/GaP materials used for LED fabrication are studied in term of the comprehensive field effect(CFE) method.A series parameters are measured and calculated.It is verified of the dis- continuity between the layers of some samples and its effects on the light emitting of the LED.Thus a method measuring the light emitting device is provided.
出处
《半导体光电》
CAS
CSCD
北大核心
1989年第4期26-30,共5页
Semiconductor Optoelectronics
