光电器件用铟锡氧化物ITO薄膜的制备及特性研究

Preparation and Investigation of Indium、Tin Oxide Films Used on Photoelectronic Device

本文采用真空瞬时蒸镀加氧化热处理方法在玻璃和硅衬底上生长出ＩＴＯ）铟锡氧化物薄膜。电阻率～１０￣（－２）Ωｃｍ，可见光区几乎透明，透射率达９４％（６３２８Ａ单色光源）。采用Ｘ光衍射和ＳＥＭ技术分析了氧化热处理前后薄膜中组份及微结构的变化。ＩＴＯ／ｐ－Ｓｉ异质结在日照下（ＡＭ１．５，１００ｍｗ／ｃｍ￣２）开路电压达１８０ｍｖ，该方法制各的ＩＴＯ膜可作为光电接收电极层有效地应用在各类光电器件上。

We deposite ITO(In2O_3、SnO_2) thin films on glass and silicon substrates us-ing the method of vacuum vapor deposition and oxidizing heat-treatment. The resis-tance of the films is 10￣(-2)Ωcm,the films are almost transparent to visible spectrum. Thetransparency is 94%(6328A).The microstructure of the films is analysed before andafter oxidizing heat-treatment by x-ray diffraction and SEM technique. The openvoItage of ITO/p-Si heterojunction reaches to 180mv, under the illiumi-nation of 100 mw/cm￣2 AM1.5.The films prepared by this process can be used as thelaver to receive photoelectrons on photoelectric device effectively.