Bi_(12)SiO_(20)晶体暗电阻率与光电导率的测量

Measurement of Dark Resistivity and Photoconductivity for Bi_(12)SiO_(20) Crystal

Bi_(12)SiO_(20)晶体是光电导电光晶体,主要用于体全息存储。它的暗电阻率与光电导率又是表征其存储特性的指标之一。 本文介绍Bi-(12)SiO_(20)晶体的暗电阻率与光电导率的测量方法和本所晶体之测量结果。表明本所研制的Bi-(12)SiO-(20)晶体与国外的水平相当。 本法简单可靠、易推广。

Bi12SiO20 is photoconductive electro-optic crystal which is mainly used for storage of valurne hologram. Dark resistivity and photoconductivity of the crystal is also one of the indexes that characterize its storage. This paper describes the measurement methods and results for dark resistivity and photoconductivity of Bi12SiO20 made by our institute. It is shown that the developing level of Bi12SiO20 in our institute can be compared with that of in the foreign countries. This method is simple and reliable.So it is quite easy to be extended.