摘要
采用自制ＳＭＡ同轴管壳和普通ＴＯ－１８管壳对同型同批的ＩｎＧａＡｓＰＩＮ光电探测器芯片进行了封装，并用自建测试系统对其Ｃ－Ｖ特性和瞬态特性进行了测试比较，结果表明：与普通ＴＯ－１８管壳封装相比，ＳＭＡ同轴管壳封装器件电容减少了约０．４ｐＦ，上升时间ｔｒ由８５ｐｓ减至２５ｐｓ以下，半高全宽ＦＷＨＭ由２１０ｐｓ减至８５ｐｓ，等效－３ｄＢ带宽增至６ＧＨｚ以上，瞬态特性显著改善。
InGaAs PIN photodetector chips have been packaged using SMA coaxial and TO-18 packages.C-V characteristic and transient response of the devices have been measured.Results show that compared to TO-18 packaged devices the transient response of SMA coaxial packaged devices is greatly improved,with a decrease of rise time from 85 ps to less than 25 ps and FWHM from 210ps to 85ps,a reduction of capacitance of about 0.4pF and an increase of -3 dB bandwidth of over 6 GHz.
出处
《半导体光电》
CAS
CSCD
北大核心
1995年第1期68-72,共5页
Semiconductor Optoelectronics
