16元非晶硅荧光探测器的结构和工艺

Structure and technology of 16 element α-Si:H fluorescent detector

研究一种新型的非晶硅ＰＩＮ异质结荧光探测器的结构和制备工艺，详细讨论了探测器单元的结构优化设计和暗电流和灵敏度等特性。实验表明，采用α－ＳｉＣ／α－Ｓｉ异质结构，提高淀积非晶硅基薄膜的本底真空度，优化制备工艺，可制备高信噪比的非晶硅荧光探测器。

The structure and preparation of the fluorescent detector consisting of 16 α-Si:H PIN heterojunction photodiodes are given.The optimum design and device characteristics such as dark current and sensitivity are discussed in detail.Experimental results show that the fluorescent detector with high signal-to-noise ratio can be obtained by α-Si :H PIN heterojunctoin in terms of optimum fabrication technology.