优化反射率以增强半导体激光器输出功率

Increasing useful output powers of semiconductor lasers by applying optimal coatings

在考虑了俄歇效应的情况下，用行波速率方程组研究了半导体激光器的输出功率与端面反射率的关系。给出了在不同偏置电流下使激光器输出端输出功率最大所需要的端面反射率。利用主动监控法在１．３μｍＩｎＧａＡｓＰ半导体激光器端面上完成了这种功率增强膜的镀制，在所选择的６０ｍＡ工作电流处，镀膜后激光器的输出功率增加了１３０％。

Taking into account the Auger effect,the output-enhancement coatings applied to the facets of the semiconductor lasers have been investigated using a set of travelling wave rate equations.The dependence of the output power of an above threshold biased diode on the reflectivities of the facets has been predicted.Calculations show that the reflectivity of the output facet has an optimal value at which the output reaches the maximum for certain bias current.The preparation of the coatings on the facets of the diode has been accomplished with the aid of the active monitoring method.As a result,the output power of a 1.3μm InGaAsP semiconductor laser biased at preset current of 60mA has been increased by 1.3 times compared with that without coatings.