双层CdS／CdSe光电导薄膜的制作和光电特性

Preparation and properties of CdS/CdSe bilayer photoconductive films

提出并采用真空热蒸发技术制备了一种新型的多元掺杂（Ｃｌ，Ｃｕ）敏化的ＣｄＳ／ＣｄＳｅ双层光电导薄膜。研究了这种光电导薄膜的暗电导和亮电导、响应时间，以及光谱响应等主要光电特性与初始材料比例、掺杂浓度和Ｃｌ／Ｃｕ比例等工艺参数的关系。实验表明：适宜的掺杂浓度和Ｃｌ／Ｃｕ比例可使暗电导降低而亮暗电导比提高，响应时间比未掺杂薄膜的显著降低；而光谱响应特性则可以通过控制ＣｄＳ／ＣｄＳｅ之比加以优化。

A new type of photoconductive film,chlorine and copper doped CdS/CdSe bilayer film,is developed successfully using vacuum evaporation technique.The effect of some deposition parameters (ratio of CdS/CdSe,doping concentration and ratio of Cl/Cu)on the properties(dark and photo-conductivity,response time and spectral response)is studied in detail.The results show that the dark conductivity and photosensitivity,response speed and spectral response can be adjusted and optimized by controlling the ratio of CdS/CdSe,doping concentration and ratio of Cl/Cu.