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场板的设计和分析 被引量:2

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摘要 着重说明了场板设计中需要考虑的因素,给出了模拟结果与分析,并且给出设计结论。
机构地区 南京东南大学
出处 《半导体技术》 CAS CSCD 北大核心 1995年第4期29-31,共3页 Semiconductor Technology
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同被引文献13

  • 1卢豫曾.高压RESURF LDMOSFET的实现[J].电子学报,1995,23(8):10-14. 被引量:6
  • 2Parpia Z., Andre C. ang Salama T.. Optimization of the breakdown voltage in RESURF LDMOSTs[C]. In: Proc Symp on High Voltage and Smart Power IC's, 1989,23-31.
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  • 4HOSSAIN Z, IMAM M, FULTON J, et al. Doubleresurf 700V n-channel LDMOS with best-in-class onresistance [C]. Proc ISPSD, 2002:137-140.
  • 5XU H P, MA V W Y, SUN I S M, et al. Superjunction LDMOS with drift region charge-balanced by distri buted hexagon p-islands[C]// Proc EDSSC. 2003:313-316.
  • 6BRIEGER K P, FLACK E, GERLACH W. The contour of an optimal field plate-an analytical approach[J].IEEE Trans Electron Devices, 1988, 35(2): 684-688.
  • 7GOUD C B, BHAT K N. Two-dimensional analysis and design consideration of high-voltage planar junctions equipped with field plate and guard ring [J]. IEEE Trans Electron Devices, 1991,38 (6):1497-1504.
  • 8FEILER W, FLACK E, GERLACH W. Multistep field plates for high-voltage planar p-n junctions[J]. IEEE Trans Electron Devices ,1992, 39(6):1514- 1520.
  • 9LUDIKHUIZE A W. A review of RESURF technology[C]// Proc ISPSD. 2000:11-18.
  • 10LIU C M, LOU K H, KUO J B, et al. 77K versus 300K operation: The quasi-saturation behavior of a DMOS device and its fully analytical model[J]. IEEE Trans Electron Devices, 1993, 40(9): 1636-1644.

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