摘要
利用各种分析电镜观察了掺杂助烧剂和未掺杂助烧剂的ＡｌＮ陶瓷的微观结构特征，鉴别了ＡｌＮ中的第二相，研究了ＡｌＮ基板上薄膜（Ａｕ－Ｐｔ－Ｔｉ）和厚膜（Ｍｏ－Ｍｎ）金属化界面的结构。
By means of analytical electronic microsccpes we observed the mi-crostructure of doped and undoped AlN ceramics, inspected the second phase in AlN, studied the interface structure of Au-Pt-Ti thin film and Mo-Mn thick film metallization.
出处
《半导体情报》
1995年第3期47-56,共10页
Semiconductor Information
关键词
氮化铝
基板
金属化层界面
分析电镜
封装
散热
AlN, Sintering,Thin film, Thick film, Dislocation, Stacking faults,Antiphase domain boundaries
