摘要
报道了８～１６ＧＨｚＧａＡｓ单片宽带分布放大器的设计与制作。单级ＭＭＩＣ电路采用三个栅宽为２８０μｍ的ＧａＡｓＭＥＳＦＥＴ作为有源器件，芯片尺寸为１．１ｍｍ×１．６ｍｍ。在８～１６ＧＨｚ频率范围，用管壳封装的两级级联放大器增益Ｇ＿ａ，为１１．３±１ｄＢ，噪声系数Ｆ＿ｎ＜６ｄＢ，输出功率Ｐ＿（１ｄＢ）＞１６ｄＢｍ。
The design and fabrication of 8～16 GHz GaAs monolithic traveling- wave amplifier is described in this paper.The single-stage MMIC is consist of 3 GaAs MESFETs,with 280μm gate periphery.The chip size is 1.1mm × 1.6mm. In the 8～ 16 GHz frequency range,the noise figure is less than 6dB,the gain is 11±1dB,the output powre P_(1dB) is greater than 16dBm for a two- stage amplifier with case package.
出处
《半导体情报》
1995年第4期17-19,共3页
Semiconductor Information
