摘要
扼要介绍了Al在VLSI的作用及要求。指出了随着VLSI的发展,由Al金属化电迁徙引起的失效将成为影响VLSI可靠性的主要失效机理,并对由电迁徙引起的各种失效现象及相应的改进措施进行了分析。最后指出,随着Al金属化系统抗电迁徙性能的提高和新结构、新工艺的出现,Al在VLSI金属中的地位将会得到进一步的确认。
This paper gives a brief introduction to the action and requirements for Al in VLSI.It indicates that electromigration failure is the major failure mechanism with development of VLSI. Various failurephenomena due to elec-tromigration failure, and methods of innovation are analysed.Finally, the paper indicates that the role of Al in VISL will be confirmed further with improving the property of anti-electromigration of Al metallization system, and the emerging of new structures and new technics.
出处
《半导体情报》
1995年第6期30-34,共5页
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