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场限环电场分布的有限元分析 被引量:2

Numerical Analysis of Field Distribution in Field Limiting Ring Systems Using Finite Element Method
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摘要 矩形场限环在器件反偏时的最大电场总是集中于四角,因而求解柱坐标下极角α不变的泊松方程可使场限环三维电场分布的讨论大为简化.在此基础上用有限元法对三场环结构的电场分布进行模拟,并对结构参数进行了优化分析.环电位随外加电压而变化的模拟结果与实验结果相吻合,表明了简化模型和分析方法的正确性和实用性. Abstract The maximum electrical field in a reversely biased PN junction equiped with rectangular field limiting rings is always concentrated on the constantly oriented corners. The 3D distribution of electrical field in the system can be easily calculated in a cylindrical coordinate system simplified by setting the polar angle constant. Characteristics simulation and parameter optimization have been carried out in a finite element numerical computing program for a multirang system. The reasonability and the effectiveness of the model and the mtnod employed here are testified by the agreement between simulation and experiments of the ring potential distributions under varied applied voltage conditions.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1995年第1期67-72,共6页 半导体学报(英文版)
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参考文献5

  • 1Huang Q,Solid-State Electronics,1991年,34卷,983页
  • 2陈星弼,功率MOSFET与高压集成电路,1990年
  • 3陈星弼,电子学报,1988年,16卷,3期,6页
  • 4邓建中,计算方法,1985年
  • 5荆春雷,半导体学报

同被引文献8

  • 1李效白.SiC和GaN电子材料和器件的几个科学问题[J].微纳电子技术,2004,41(11):1-6. 被引量:6
  • 2[1]Baliga B J.Power semiconductor devices figure of merit for high frequency application[J].IEEE EDL,1989,10(10):455-457.
  • 3[2]Saxena V,Su J N,Steckl A J.High-voltage Ni-and pt-SiC Schottky diodes utilizing metal field plate termination[J].IEEE Electron Devices,1999,46(3):456-464.
  • 4[3]Kestle A,Wilks SP,Dunstan PR,et al.,improved Ni/SiC Schottky diode formation[J].IEEE Electronics Lett,2000,36(3):267-268.
  • 5[5]Zhao J H,Alexandrov P,Li X.Demonstration of the first 10KV 4H-SiC Schottky-barrier diodes[J].IEEE Electron Device Letters,2003,24(6):402-404.
  • 6[7]Schoen K J,Woodall J M,Copper J A,et al.Design considerations and experimental characterization of high voltage SiC Schottky barrier rectifiers[J].IEEE Trans on Electron Devices,1998,45(7):1 595-1 604.Devices,1992,39(7):1 768-1 770.
  • 7[8]Basavana Goud C,Bhat K N.Breakdown voltage of field plate and filed-limiting ring techniques:numerical comparison[J].IEEE Trans on Electron Devices,1992,39(7):1 768-1 770.
  • 8施敏,半导体器件.物理与工艺,1992年

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