摘要
本文报道了一种自对准Ｔ形电极结构的硅双极晶体管的制作和实验结果．这种结构的晶体管发射极和基极接触窗口的间距仅０．４μｍ，发射极排列周期为４μｍ．测试结果表明，晶体管在４．２ＧＨｚ下，连续波输出功率大于３Ｗ，增益８ｄＢ和集电极效率４０％；作为振荡应用时。在４．３ＧＨｚ的振荡频率下，振荡输出功率可达１Ｗ，ＤＣ－ＲＦ转换效率为２０％．
Abstract This paper presents the fabrication and experimental results of a bipolar transistor with self-aligned T-shaped electrode structure. The transistor with 0. 4μm spacing between emitter and base contact and 4μm emitter-emitter pitch has been fabricated. It is shown that the transistor has 3W CW output power with 8dB gain and 40% collector efficiency at 4. 2 GHz. For oscillation application, the oscillation power output and the DC-RF coversion efficiency of this transistor at 4. 3 GHz are up to 1W and 20%, respectively.
