摘要
本文用ＭＯＣＶＤ法研究了ＧａＩｎＰ及其掺Ｚｎ材料的生长和特性，并进行了生长速率对生长动力学、Ｚｎ的掺杂效率、Ｉｎ的组分、表面形貌、电学性质的影响研究．
Abstract The growth and characerization of undoped GaInP and Zn-doped GaInP are described, and the influence of growth rate on grwoth kinetics, Zn incorporation efficrency,In composition, surface morphology and electrical properties of Zn-doped GaInP grown by MOCVD are also presented.
