摘要
从电特性、激活能、应力和剩余损伤几个方面，对ＧａＡｓ晶体中以较大剂量注入的ＭｅＶ硅原子在一步快退火、两步快退火下的行为进行了分析．经过两步快退火处理的样品，剩余位错环密度降低，晶格应力消除，注入区的结晶品质得到改善，硅原子替位所需激活能较小，提高了注入杂质电激活效率和迁移率，降低了薄层电阻．两步快退火使注入杂质在大多数辐射损伤消除后更易激活，特别适用于大剂量ＭｅＶ硅注入后的退火处理．
Abstract On the basis of careful studies including the electrical properties, actrivation energy, crystal strain and residual dislocation loops, compared to one-step RTA, a two-step RTA gives bettwer electrical properties, higher activation rate and further improved crystal lattice. The improvement results in smaller strain, less dislocation loops and lower activation energy. In case of two-step RTA. It is easier to activate the implanted Silicon atoms in a well recovered GaAs crystal lattice. The two-step RTA is suitable for treating higher dose or multiple energy MeV Si implants in GaAs.
基金
国家自然科学基金
