摘要
本文采用奇异摄动方法分析了半导体器件瞬态模型解的渐近性态，给出了构造近似解的方法和步骤，获得了具有二阶修正精度的解的近似表达式．该近似结果与数值结果相吻合．
Abstract An asymptotic analysis of transient semiconductor device equation is presented by using singular perturbation theory. The methods and steps which result in asymptotic solutions are given. The expressions of the solutions with precision O(λ3) are obtained. Asymptotic results are in agreement with numerical ones.
基金
国家自然科学基金
