摘要
超大规模集成电路与真空微电子器件的发展，要求制备超浅Ｐ－Ｎ结，低能量和大倾斜角离子注入成为一种有吸引力的新技术．本文借助于背散射沟道分析以及剥层霍尔测试，研究了能量为１０ｋｅＶ，入射束与样品法线的夹角分别为７°，１５°，３０°和６０°的Ａｓ＋离子注入到硅中造成的辐射损伤及其退火特性．
Abstract With the development of VLSI and vacuum microelectronics devices,ultrashallow P-N junctions are needed and large tilt angle ion implantation at low energy become a new attractive technology.In this paper,Rutherford Backscattering Spectroscopy (Channeling) and Stripping Hall Analysis are employed to study the rediation damage and annealing properties of 10keV As+ ion implanted silicon wafers with 7°,15°,and 60° off the <100> direction,respectively.
