摘要
本文对于由非晶硅和单晶硅两个区域构成的发射区结构，计算了利用非晶硅垂直电阻的镇流作用后发射结直流电流密度的横向分布，并给出发射极有效半宽度与发射区方块电阻及基区方块电阻的关系曲线．这些分析有助于非晶硅发射极微波功率管的性能的提高．
Abstract For the emitter structure made by two regions of amorphous Si and crystalline Si,utilizing the ballasting current action of amorphous Si vertical resistance,the lateral distribution of the emitter D. C. current density is calculate and the dependence of the emitter effective half width on the emitter square resistance and the base square resistance is given. These analyses are helpful to improve the performance of the microwave power transistors with amorphous silicon emitter.
