摘要
分析研究了Ｈ２＋Ｏ２合成栅氧化、多晶硅栅光刻前后注Ｆ和Ｐ的沟和Ｎ沟ＮＯＳＦＥＴ，在最劣γ辐照偏置下的阈电压和Ｉ（ｄｓ）－Ｖ（ｇｓ）亚阈特性的辐射影响应．结果表明，多晶硅栅光刻前注Ｆ比光刻后注Ｆ和未注Ｆ，具有更强的抑制辐射感生氧化物电荷积累和界面态生长的能力．其辐射敏感性的降低可能归结为ＳｉＯ２栅介质和Ｓｉ／ＳｉＯ２界面附近Ｆ的浓度相对较大以及栅场介质中Ｆ注入缺陷相对较少所致．
Abstract The γ-ray irradiation responses of Si gate P and N channel MONFETs for 30keV fluorine implantation before and after polysilicon gate lithograph with H2+O2 gate oxidation under worst irradiation bias have been investigated. For suppressing the radiationinduced threshold voltage shifts, controling oxide charge and interface state generation,fluorine introduction before polysilicon lithograph is a better implantation technology than that after polysilicon lithograph or no fluorine introduction. The less radiation sensitivity should be attributed to the higher fluorine concentration in SiO2 gate oxide and on Si/SiO2 interface as well as the less implantation defects in gate and field dielectrics.
