摘要
本文研究了硼注入绝缘ＩｎＰ和Ｎ型ＩｎＰ的电性质．硼注入是在１００ｋｅＶ能量下，剂量从１×１０１２到１×１０１６ｃｍ－２范围内进行．注入后的退火在纯氮气的保护下由１００℃到７００℃范围变化．硼注入半绝缘ＩｎＰ的结果表明，硼注入诱导形成载流子分布．硼注入Ｎ型ＩｎＰ后形成高阻绝缘层，其电阻率随退火温度变化出现两个峰值．本文还讨论了硼注入层电性能变化的机理．
Abstract The effects of boron implantation and subsequent annealing on the electrical properties of semi insulating (SI) InP doped with Fo and N-type InP doped with Sn have been investigated.The boron implantation was performed at the energy of 100 keV with the doses ranging from 1×1012 to 1×106cm-2 and subsequent annealing at temperatures ranging from 100 to 700℃.After B+ implantation, the resistivity of N-type InP appears two peaks versus the annealing temperature. For SI-InP, the ion Induced carrier concentration and the resistivity were changed with the ion dose and annealing temperature. The mechanism of these behaviors is properly discussed.
基金
国家自然科学基金
国家教委射线束工程实验室资助
关键词
离子注入
硼
磷化铟
电特性
半导体器件
Boron
Electric properties
Ion implantation
Semiconductor devices
