摘要
本文报道了外腔面发射ＩｎＧａＡｓ／ＩｎＰ半导体激光器的实验结果．利用面发射ＩｎＧａＡｓ／ＩｎＰ半导体材料作为激活介质，采用锁模（或连续）Ｎｄ＋３：ＹＡＧ激光（波长１．３２μｍ）泵浦．平均输出功率达１８７ｍＷ，同步泵浦获得最窄脉冲宽度为６ｐｓ，输出波长１．５μｍ，利用衍射光栅对脉冲进行压缩获得１８１ｆｓ超短光脉冲．
Abstract The experimental results of external cavity surface-emitting InGaAs/InP semiconductor laser are reported. An average output power of as high as 187mW and the shortest pulse with of 6ps at 1. 5μm are achieved with the MBE-grown 3μm-thick In0.53Ga0.47As/Inp as the gain medium and a mode-locked (or CW) Nd+3: YAG laser at 1. 32μm as the pump source. The pulse width can be compressed to 181fs with a diffraction grating pair.
关键词
半导体激光器
光泵
INGAAS
磷化铟
High power lasers
Indium compounds
Optical communication
Optical pumping
Semiconducting gallium arsenide
