摘要
通过综合测试７７Ｋ和２９５Ｋ下先电子后空穴以及先空穴后电子注入时阈值电压和平带电压漂移以及Ｉ－Ｖ特性的蜕变，研究了ＮＭＯＳＦＥＴ中电荷俘获、界面态产生以及器件蜕变的低温特性和机制．提出的界面蜕变模型成功地解释了低温下ＮＭＯＳＦＥＴ热载流子增强蜕变的微观机制．
Abstract A combined measurement method for different channel hot-carrier injection sequences is employed to investigate the 77K hot-carrier effects in NMOSFET's. Lowtemperature behavior of charge trapping, interface state generation and device degradation as well as the corresponding mechanisms are well perceived. The proposed interfacedegradation model is capable of interpreting the microscopic mechanisms for the enhanced lowtemperature hot-carrier effects in NMOSFET's.
基金
国家自然科学基金
关键词
NMOSFET
热载流子注入
蜕变
电子注入
Electric currents
Ion implantation
MOSFET devices
Surface properties
