摘要
本文较为详细地介绍了能有效地改善ＳＯＳ材料结晶质量的双固相外延ＤＳＰＥ工艺，给出了优化的工艺条件．通过比较用ＤＳＰＥ及普通ＳＯＳ材料制作的ＣＭＯＳ／ＳＯＳ器件和电路的特性可以看出，采用ＤＳＰＥ工艺能显著改善ＳＯＳ材料的表面结晶质量，应用ＤＳＰＥ工艺在硅层厚度为３５０ｎｍ的ＳＯＳ材料上成功地研制出了沟道长度为１μｍ的高性能ＣＭＯＳ／ＳＯＳ器件和电路，其巾ＮＭＯＳＦＥＴ及ＰＭＯＳＦＥＴ的泄漏电流分别为２．５ｐＡ和１．５ｐＡ，１９级ＣＭＯＳ／ＳＯＳ环形振荡器的单级门延迟时间为３２０ｐｓ．
Abstract A new VLSI process, double solid phase epitaxy(DSPE) process, was successfully developed for short-channel CMOS/SOS circuits. CMOS/SOS devices and ring oscillators were fabricated on thin 350nm epilayers by using DSPE and as-grown SOS materials. Furthermore, 1μm DSPE CIOS/SOS devices' characterization and speed performance have been discussed by using MOSFETs and ring oscillators in comparison with the asgrown film devices. Remarkable improvement of the crystalline quality of the thin SOS films has been achieved for the DSPE technology. 2. 5pA and 1. 5pA leakage currents of N- and P-MOSFET and 320ps stage delay were successfully obtained by DSPE CMOS/SOS devices on 350nm thick SOS film.
