摘要
本文根据目前国内半导体工艺水平的现状，提出了一种适合我国国情的制作ＩＧＢＴ的工艺方法─—三重扩散法，着重用器件模拟的方法，从理论上分析了三重扩散法在高压ＩＧＢＴ器件制作上的优势和切实可行性，并用实验的结果验证了其正确性．
Abstract According to the state of the semi-conductor technology in our country, this paper proposed a new technology-triple-diffused, used to fabricate IGBT. The superiority and feasibility of the triple-diffused IGBT have beed analysed by device modelling and proved by experiments.
