摘要
我们用分子束外延法在GaAs(100)衬底上生长一种新型的Ⅱ-Ⅳ族宽禁带化合物薄膜Zn1-xMgxSySe1-y.改变生长条件,可以控制Mg和S的组分在0≤x≤1,0≤y≤1.Mg和S的组分用俄歇电子能谱测定.用X-射线衍射技术对样品结构进行的研究发现,对任意Mg和S的组分,ZnMgSSe均为闪锌矿结构.用椭圆偏振光谱仪对材料的能隙和折射率进行的研究表明,加入Mg以后ZnMgSSe样品的折射率比ZnSSe样品的折射率要小,并且ZnMgSSe样品的折射率随民的增大而变小.合理选择x、y,在2.8eV<Eg<3.6eV均能得到与GaAs晶格匹配的Zn1-xMgxSySe1-y.
Abstract A new kind of Ⅱ-Ⅳ wide band-gap Zn1-xMgxSySe1-y films was grown on GaAs (100) substrates by molecular beam epitaxy. Changing the growth conditions, we can grow films with 0≤x≤1, 0≤y≤1. The Mg and S compositions of the films were measured by Auger electron spectroscopy. The structural characteristics of the films were studied by X-ray diffraction, and the experimental results have shown that the films are zinc-blende structure at any Mg and S contents. The band-gap energies and the refractive indices of ZnMgSSe alloys were studied by ellipsometry method at room temperature. We have found that the refractive index n of Zn1-xMgxSySe1-y decreases as Eg increases. The experimental results have also shown that band-gap energy can be varied from 2. 8 to 3.6eV, maintaining lattice-matching to a GaAs (100) substrate at proper proportion of Mg and S compositions.
关键词
ZNMGSSE
砷化镓
薄膜
分子束外延生长
Magnesium compounds
Molecular beam epitaxy
Semiconducting films
Semiconductor quantum wells
Zinc compounds