摘要
本文报道了室温连续激射的ＧａＡｓ／ＧａＡＩＡＳ新结构垂直腔面发射半导体激光器的最新研究结果．该器件结构是采用钨丝掩膜四次质子轰击方法制备的，这种方法是目前报道的垂直腔面发射激光器制作工艺中最简单的．对于直径１５μｍ的钨丝，器件的最低阈值电流为１７ｍＡ，最大光输出功率达４ｍＷ，微分量子效率高达６５％．
Abstract A RT CW novel GaAs/GaAIAs vertical-cavity surface-emitting semiconductor laser is reported. The structure is obtained by four times deep H+ implantations using the crossed tungsten wire as the implantations mask. The fabrication process is the simplest ever reported in vertical-cavity surface-emitting lasers fabrication. The lasing wavelength of about 8 7 1 nm, the lowest threshold current of 1 7 mA, the largest output power of 4.0 mW and the maximum differential quantum efficiency of 65% were obtained.
基金
"863"高技术基金
