Cr：KTP晶体生长及其有关性能研究

The Study of the Cr:KTP Crystal Growing and Its Related Properties

采用高温溶液法在不同温度下生长了掺质量分别为摩尔原子质量的０．０３％和０．１％的Ｃｒ：ＫＴＰ晶体，确定了它们的最佳生长温度区间，并讨论了不同生长温度区间对Ｃｒ：ＫＴＰ晶体形态的影响。利用光学显微镜和扫描电镜观察了Ｃｒ：ＫＴＰ的３种生长缺陷。利用差热分析法分析了Ｃｒ２Ｏ３对ＫＴＰ晶体分解温度的影响。测定了Ｃｒ：ＫＴＰ品体的吸收光谱和蓝绿波段的荧光光谱，并用间接法估计了晶体中Ｃｒ４＋离子的含量。确定了摩尔原子质量的０．０３％为Ｃｒ：ＫＴＰ晶体的最佳掺质浓度，并用激光激发实验予以证明。

In this paper, the Cr:KTP Crystal of two different doping concentration(of 0.03% and 0.l% respectively) are grown using high temperature solution method at different temperatures. The optimal temperature range for these two crystal growings is found; the influence of temperature on Cr:KTP Crystal morphological structure is discussed; Three kinds of defects are studied using both optical and electronic microscopes. The influence of Cr2O3 on decomposing temperature of KTP is analysed; The absorption spectrum and the fluorescence spectrum in its Blue-green wave-band are determined; The content of Cr4+ in Cr:KTP Crystal is estimated. It is proved that the function of Cr:KTP(0.03%) is better than that of Cr:KTP (0.1%).