材料表面和界面化学状态的俄歇化学效应研究

Study of the Chemical States on Surface and Interface of Materials Studied by Auger Chemieal Effects

本文运用俄歇化学效应研究了三种纳米薄膜材料的表面，膜层及界面元素的化学状态。研究结果表明用作可燃气体传感器的氧化锡气敏薄膜在离子注Ｓｂ层中以ＳｂＳｎｏ＿ｘ物种存在，在无Ｓｂ层中则以Ｓｎｏｘ（ｘ＜１）形式存在。高能离子注入的金属Ｓｂ也以ＳｂＳｎＯｘ物种存在。具有太阳能选择性吸收功能的氮化铝薄膜则以ＡｌＮ＿ｘＯ＿ｙ物相存在。而ＡＰＣＶＤ法制备的氮化硅薄膜热氧化不稳定的本质则是由于成膜过程中在膜层中包埋了活性较强的自由硅，该自由Ｓｉ容易和热处理气氛中的残余氧反应，从而促进了Ｓｉ＿３Ｎ＿４簿膜层的氧化。

he chemical states of surface and interface of three film materiais have been studied using Augerchemical effects. The results show that the Sb which was implanted by high energy ions reacted with SnO_xand formed SbSnO_x species. The Vaience electron of Sb 5p orbit immigratted into Sn 5s orbit and the elec-tron ic conductivity of tin oxide film in creased. The selective abeorption film of sun light is composed of AlN_x O_y species. The existence of free Si in Si_3N_4 film can induce the oxidation of Si_3 N_4 film. The Augerchemical effects are very useful for the study of chemical states on the surface and interface of materials.